super fast recovery diode RFN10NS3S l series l dimensions (unit : mm) l land size figure (unit : mm) standard fast recovery l applications general rectification l features 1)low switching loss 2)high current overload capacity l structure 3)cathode common single type l construction silicon epitaxial planer l absolute maximum ratings (tc=25 ? c) symbol limits unit v rm 350 v v r 350 v io tc=88c 10 a tj 150 ? c tstg - 55 to + 150 ? c (*) 1-3pin common circuit l electrical characteristics (tj=25 ? c) symbol min. typ. max. unit forward voltage v f 1.25 1.5 v i r 0.05 10 a trr 22 30 ns thermal resistance rth(j-c) 4.0 c/w (*) design assurance without measurement. forward current surge peak i fsm reverse voltage average rectified forward current l taping dimensions (unit : mm) parameter repetitive peak reverse voltage conditions reverse recovery time (*) reverse current parameter junction temperature storage temperature junction to case duty 0.5 direct voltage 60hz half sin wave resistive load 60hz half sin wave, non-repetitive one cycle peak value, tj=25c (*) a conditions i f =10a v r =350v i f =0.5a,i r =1a,irr=0.25i r 100 rohm : lpds jeita : to263s manufacture year, week and day rfn10 ns3s 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFN10NS3S 0.1 1 10 100 0 500 1000 1500 2000 2500 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 1 10 100 1000 10000 100000 0 50 100 150 200 250 300 350 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz tj=25 c 1000 1050 1100 1150 1200 1250 v f dispersion map forward voltage:v f (mv) ave:1091.5mv tj=25 c i f =10a n=20pcs 1 10 100 1000 reverse current:i r (na) i r dispersion map tj=25 c v r =350v n=20pcs ave:31.8na 140 145 150 155 160 165 170 175 180 ave:161.2pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN10NS3S 160 180 200 220 240 260 280 300 ave:224.5a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 2pi 1pi 3pi 1 - 3pin shorted 0 5 10 15 20 25 30 ave:18.5ns tj=25 c i f =0.5a i r =1.0a irr=0.25 i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 2pi 1pi 3pi 1 - 3pin shorted 1 10 100 1000 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 2pi 1pi 3pi 1 - 3pin shorted 0 2 4 6 8 10 12 14 16 18 20 c=200pf r=0 ave 13.8kv c=100pf r=1.5k ave 0.73kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN10NS3S 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 2 4 6 8 10 12 14 16 18 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =280v 0a 0v 0 2 4 6 8 10 12 14 16 18 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 t tj=150 c d=t/t t v r io v r =280v 0a 0v average rectified forward current:io(a) case temperature:tl( c ) derating curve (io - tl) 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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